Giant converse magnetoelectric effect in a multiferroic heterostructure with polycrystalline Co2FeSi
Giant converse magnetoelectric effect in a multiferroic heterostructure with polycrystalline Co2FeSi
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DOI：
10.1038/s41427-022-00389-1
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发表时间：
2022-05
影响因子：
9.7
通讯作者：
Shumpei Fujii;T. Usami;Y. Shiratsuchi;A. Kerrigan;A. Yatmeidhy;S. Yamada;T. Kanashima;R. Nakatani;V. Lazarov;T. Oguchi;Y. Gohda;K. Hamaya
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文献类型：
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作者：
Shumpei Fujii;T. Usami;Y. Shiratsuchi;A. Kerrigan;A. Yatmeidhy;S. Yamada;T. Kanashima;R. Nakatani;V. Lazarov;T. Oguchi;Y. Gohda;K. Hamaya
为了克服自旋电子学应用中的瓶颈，例如超低功率磁阻随机存取存储器器件，铁磁电极中磁化矢量的电场控制已经显示出很大的希望。在这里，我们显示了巨匡威磁电（CME）效应的多铁性异质结构组成的铁磁Heusler合金Co2 FeSi和铁电氧化物Pb（Mg 1/3 Nb 2/3）O3-PbTiO 3（PMN-PT）的电场控制的磁化矢量。利用生长在PMN-PT（011）上的Co_2FeSi多晶薄膜的面内单轴磁各向异性，证明了其在回复态下的非易失性和可重复的磁化矢量开关。多晶Co2 FeSi/PMN-PT（011）的CME耦合系数在室温下超过1.0 × 10−5s/m，与单晶Fe 1-xGax/PMN-PT系统相当。具有L21有序结构的Co2 FeSi的磁各向异性能的应变诱导变化证实了巨CME效应。这种方法可以导致一个新的解决方案，在室温下的自旋电子存储器架构中的写入功率的减少。
To overcome a bottleneck in spintronic applications such as those of ultralow-power magnetoresistive random-access memory devices, the electric-field control of magnetization vectors in ferromagnetic electrodes has shown much promise. Here, we show the giant converse magnetoelectric (CME) effect in a multiferroic heterostructure consisting of the ferromagnetic Heusler alloy Co2FeSi and ferroelectric-oxide Pb(Mg1/3Nb2/3)O3-PbTiO3(PMN-PT) for electric-field control of magnetization vectors. Using an in-plane uniaxial magnetic anisotropy of polycrystalline Co2FeSi film grown on PMN-PT(011), the nonvolatile and repeatable magnetization vector switchings in remanent states are demonstrated. The CME coupling coefficient of the polycrystalline Co2FeSi/PMN-PT(011) is over 1.0 × 10−5s/m at room temperature, comparable to those of single-crystalline Fe1-xGax/PMN-PT systems. The giant CME effect has been demonstrated by the strain-induced variation in the magnetic anisotropy energy of Co2FeSi with anL21-ordered structure. This approach can lead to a new solution to the reduction in the write power in spintronic memory architectures at room temperature.