Low temperature processed hafnium oxide: Structural and electrical properties
Low temperature processed hafnium oxide: Structural and electrical properties
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DOI：
10.1016/j.mssp.2006.10.031
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发表时间：
2006-12-01
影响因子：
4.1
通讯作者：
Martins, R.
中科院分区：
文献类型：
--
作者：
Pereira, L.;Barquinha, P.;Martins, R.
在这项工作中，氧化铌（HfO 2）的沉积通过r.f.在室温下磁控溅射，然后在200 ℃下在合成气体（N-2 + H-2）和氧气气氛中分别退火2、5和10小时。在合成气体中退火2小时后，界面性能得到改善，相关的平带电压从-2.23 V变为-1.28 V。这意味着氧化物电荷密度从1.33 x 10（12）cm（-2）降低到7.62 x 10（11）cm（-2）。退火5小时后，由于膜的致密化，仅介电常数提高。最后，在10小时退火后，我们注意到电膜的性能下降，平带电压和固定电荷密度分别为-2.96和1.64 × 10（12）cm（-2）。除此之外，漏电流也由于结晶而增加。另一方面，通过在200 ℃下沉积膜或在氧化气氛中对其进行退火，当将这些数据与通过在合成气体中对膜进行退火获得的数据进行比较时，没有观察到改善。这里的平带电压是更负的和滞后油的C-V图是大于在合成气体中退火的膜上记录的，这意味着界面性能的退化。(c)2006爱思唯尔有限公司保留所有权利。
In this work hafniurn oxide (HfO2) was deposited by r.f. magnetron sputtering at room temperature and then annealed at 200 degrees C in forming gas (N-2 + H-2) and oxygen atmospheres, respectively for 2,5 and 10h. After 2h annealing in forming gas an improvement in the interface properties occurs with the associated flat band voltage changing from -2.23 to -1.28 V. This means a reduction in the oxide charge density from 1.33 x 10(12) to 7.62 x 10(11) cm(-2). After 5 h annealing only the dielectric constant improves due to densification of the film. Finally, after 10 h annealing we notice a degradation of the electrical film's properties, with the flat band voltage and fixed charge density being -2.96 and 1.64 x 10(12) cm(-2), respectively. Besides that, the leakage current also increases due to crystallization. On the other hand, by depositing the films at 200 degrees C or annealing it in an oxidizing atmosphere no improvements are observed when comparing these data to the ones obtained by annealing the films in forming gas. Here the flat band voltage is more negative and the hysteresis oil the C-V plot is larger than the one recorded on films annealed in forming gas, meaning a degradation of the interfacial properties. (c) 2006 Elsevier Ltd. All rights reserved.