Low-Dimensional Lead-Free Inorganic Perovskites for Resistive Switching with Ultralow Bias
Low-Dimensional Lead-Free Inorganic Perovskites for Resistive Switching with Ultralow Bias
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用于超低偏置电阻开关的低维无铅无机钙钛矿
DOI：
10.1002/adfm.202002110
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发表时间：
2020-04-29
影响因子：
19
通讯作者：
Wu, Tom
中科院分区：
文献类型：
--
作者：
Ge, Shuaipeng;Guan, Xinwei;Wu, Tom
近年来，3D有机-无机和全无机卤化铅钙钛矿一直被广泛用于阻变存储器。不幸的是，不稳定性和铅毒性是其大规模商业应用的两个最重要的挑战。降维和组合工程是克服这些挑战的有效手段。本文中，低维无机无铅Cs3 Bi 2 I9和CsBi 3 I10类钙钛矿膜被开发用于电阻切换存储器应用。这两款器件均表现出稳定的开关特性，具有超高开/关比（约为10（6））、超低工作电压（低至0.12 V）和自顺应特性。0 D Cs3 Bi 2 I9基器件比2D CsBi 3 I10基器件具有更好的保持时间和更大的复位电压。通过调制电流顺应性，也观察到多电平阻变行为，有助于器件的可调谐性。电阻开关机制取决于钙钛矿薄膜中卤化物空位的导电细丝的形成和破裂，这与电极/钙钛矿界面处AgIx层的形成相关。这项研究丰富了全无机无铅卤化物钙钛矿开关材料的库，并提供了新的见解，调整操作的解决方案处理的存储设备。
3D organic-inorganic and all-inorganic lead halide perovskites have been intensively pursued for resistive switching memories in recent years. Unfortunately, instability and lead toxicity are two foremost challenges for their large-scale commercial applications. Dimensional reduction and composition engineering are effective means to overcome these challenges. Herein, low-dimensional inorganic lead-free Cs3Bi2I9 and CsBi3I10 perovskite-like films are exploited for resistive switching memory applications. Both devices demonstrate stable switching with ultrahigh on/off ratios (approximate to 10(6)), ultralow operation voltages (as low as 0.12 V), and self-compliance characteristics. 0D Cs3Bi2I9-based device shows better retention time and larger reset voltage than the 2D CsBi3I10-based device. Multilevel resistive switching behavior is also observed by modulating the current compliance, contributing to the device tunability. The resistive switching mechanism is hinged on the formation and rupture of conductive filaments of halide vacancies in the perovskite films, which is correlated with the formation of AgIx layers at the electrode/perovskite interface. This study enriches the library of switching materials with all-inorganic lead-free halide perovskites and offers new insights on tuning the operation of solution-processed memory devices.