Observation of the distribution of the transition temperature in PbIn1/2Nb1/2O3
Observation of the distribution of the transition temperature in PbIn1/2Nb1/2O3
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DOI：
10.1143/jpsj.69.1533
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发表时间：
2000-05-01
影响因子：
1.7
通讯作者：
Ishibashi, Y
中科院分区：
文献类型：
--
作者：
Ohwa, H;Iwata, M;Ishibashi, Y
采用偏光显微镜观察方法，对不同热处理工艺制备的PbIn1/2Nb1/2O3 （PIN）单晶片进行了研究。结果表明，在半无序生长PIN中，在30 ~ 130℃的宽温度范围内存在高低温相共存状态，共存区域的相界随温度变化而移动，表明相变温度在样品板中呈空间分布。在样品中几个不同的点（约0.04 mm(2)）进行的介电测量也证实了这种分布。讨论了部分无序PIN样品中转变温度的分布。
PbIn1/2Nb1/2O3 (PIN) single crystal plates obtained by different thermal treatment were investigated by means of polarizing microscopic observations. It was found that, in an as,grown PIN (called partly disordered PIN), there is a coexistence state of the high and low temperature phases in a wide temperature range from 30 to 130 degrees C. In the coexistence region, phase boundaries were observed to move according to temperature change, indicating that the phase transition temperature should distribute spatially in the sample plate. This distribution was also confirmed by the dielectric measurement made at several different spots (about 0.04 mm(2)) in the sample. The distribution of the transition temperature in the partly disordered PIN sample was discussed.