Determination of the dispersion of the index of refraction and the elastic moduli for molecular-beam-epitaxy-grown Zn1−xBexSe alloys
Determination of the dispersion of the index of refraction and the elastic moduli for molecular-beam-epitaxy-grown Zn1−xBexSe alloys
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分子束外延生长 Zn1−xBexSe 合金折射率色散和弹性模量的测定
DOI：
10.1063/1.1379356
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发表时间：
2001
影响因子：
4
通讯作者：
M. Grimsditch
中科院分区：
文献类型：
--
作者：
F. Peiris;U. Bindley;J. Furdyna;Hyunjung Kim;A. Ramdas;M. Grimsditch
棱镜耦合器技术，连同反射率通道光谱，被用来确定一系列的Zn 1 −xBexSe的三元合金的折射率色散的GaAs衬底上的分子束外延生长。测量覆盖了400-1300 nm的波长范围和整个Be浓度范围，从x=0到1.00。折射率的精确值的可用性，然后使我们能够确定的弹性模量c11的Zn 1-xBexSe和它的依赖于Be浓度x从频率变化的布里渊散射光谱上观察到的这些三元合金的外延层。c11结果清楚地表明，随着Be浓度的增加，Zn 1 −xBexSe中的键合变得更加牢固。
The prism coupler technique, together with reflectivity channeled spectra, were used to determine the dispersion of the indices of refraction for a series of ternary alloys of Zn1−xBexSe grown by molecular-beam epitaxy on GaAs substrates. The measurements covered the wavelength range of 400–1300 nm, and the entire Be concentration range, from x=0 to 1.00. The availability of accurate values of the index-of-refraction then enabled us to determine the elastic moduli c11 for the Zn1−xBexSe and its dependence on the Be concentration x from frequency shifts in Brillouin scattering spectra observed on the epilayers of these ternary alloys. The c11 results clearly indicate that the bonding in Zn1−xBexSe becomes more robust as the Be concentration increases.