Nonuniformity Analysis of a 65-kpixel CMOS SPAD Imager
Nonuniformity Analysis of a 65-kpixel CMOS SPAD Imager
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DOI：
10.1109/ted.2015.2458295
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发表时间：
2016-01-01
影响因子：
3.1
通讯作者：
Charbon, Edoardo
中科院分区：
文献类型：
--
作者：
Antolovic, Ivan Michel;Burri, Samuel;Charbon, Edoardo
随着CMOS单光子雪崩二极管（SPAD）技术的稳步发展，噪声、时序分辨率和灵敏度都在不断提高，空间分辨率也在不断提高。像素数量的增加使得对非均匀性及其影响的全面分析变得有意义，从而可以更准确地将SPAD成像仪与其他高端科学成像仪（如电子倍增电荷耦合器件和科学CMOS）进行比较。对512 × 128像素门控SPAD成像仪进行了全面的非均匀性分析，测量了暗噪声、后脉冲、串扰、信号响应和散粒噪声。这种分析导致了各种后处理算法，以提高响应的线性度，例如，基于基态耗尽显微镜的超分辨率显微镜和其他技术所要求的线性度。我们推导了一个适用于1-b SPAD成像仪计数率的新校正公式，并测量了微透镜对光子探测效率的显著提高。这些技术被用来验证成像仪在荧光显微镜例子中的适用性。
While CMOS single-photon avalanche diode (SPAD) technology has steadily advanced, improving noise, timing resolution, and sensitivity, spatial resolution has been increasing as well. The increase in the number of pixels has made a comprehensive analysis of nonuniformity and its effects meaningful, allowing a more accurate comparison of SPAD imagers with other high-end scientific imagers, such as electron multiplying charge-coupled device and scientific CMOS. A comprehensive nonuniformity analysis was conducted on a 512 x 128 pixel gated SPAD imager, where dark noise, afterpulsing, crosstalk, signal response, and shot noise were measured. This analysis has led to a variety of postprocessing algorithms to improve the linearity of the response as for example required by ground state depletion microscopy-based superresolution microscopy and other techniques. We derived a new correction formula for the count rate applicable to 1-b SPAD imagers, and we measured a significant improvement of photon detection efficiency using microlenses. These techniques were used to validate the suitability of the imager in fluorescence microscopy examples.