Semi-polar InGaN/GaN multiple quantum well solar cells with spectral response at up to 560 nm
Semi-polar InGaN/GaN multiple quantum well solar cells with spectral response at up to 560 nm
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DOI：
10.1016/j.solmat.2017.10.005
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发表时间：
2018-02
影响因子：
6.9
通讯作者：
J. Bai;Y. Gong;Z. Li;Yun Zhang;Tao Wang
中科院分区：
文献类型：
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作者：
J. Bai;Y. Gong;Z. Li;Yun Zhang;Tao Wang
我们展示了一系列高铟含量的半极性InGaN/GaN多量子阱（QW）太阳能电池，其工作波长范围从绿色到琥珀色。这些器件生长在高晶体质量的过度生长半极性GaN模板上。在长波长处的光谱响应可达560ánm。随着量子阱中铟含量的增加（即工作波长的增加），外量子效率在很宽的波长范围内增加。与绿色qw器件相比，琥珀色qw器件的短路电流密度和转换效率显著提高，在AM 1.5G照明下，电流密度达到1.4ámA/cm2，增强系数达到170%。光致发光激发测量表明，这是由于InGaN量子阱中的光吸收增强，将量子阱的吸收边推向更长的波长。在此基础上，研究了不同铟含量的InGaN QW太阳能电池。上面有两个黄色QW，下面有一个蓝色QW的器件，其光谱响应在长波长处达到560ánm，而上面有一个蓝色QW，下面有两个黄色QW的器件在460ánm之外没有响应。结果表明，最接近顶型GaN的InGaN QW在长波侧的光谱响应中起着决定性的作用。
We demonstrate a series of semi-polar InGaN/GaN multiple quantum well (QW) based solar cells with high indium content, where operating wavelength ranges from green to amber. These devices are grown on high crystal quality overgrown semi-polar GaN templates. The spectral response at a long wavelength of up to 560ánm has been obtained. With increasing indium content of QWs (i.e., increasing operating wavelength), the external quantum efficiency increases across a wide range of wavelength. Compared to the device with green QWs, the devices with amber QWs exhibits significantly increased short-circuit current density and conversion efficiency, achieving a current density of 1.4ámA/cm2and an enhancement factor of 170% under the AM 1.5G illumination. Photoluminescence excitation measurements show that it is attributed to enhanced light absorption in InGaN QWs by pushing the QW absorption edge towards longer wavelength. Furthermore, another series of InGaN QW solar cells is investigated with different indium contents in the three QWs of each device. The device with two yellow QWs on the top and one blue QW underneath exhibits spectral response at a long wavelength of up to 560ánm, whereas the device with one blue QW on the top and two yellow QWs underneath shows no response beyond 460ánm. It reveals that the InGaN QW closest to the topp-type GaN plays a determined role in the spectral response on the long wavelength side.