On the Mechanical Stresses of Cu Through-Silicon Via (TSV) Samples Fabricated by SK Hynix vs. SEMATECH – Enabling Robust and Reliable 3-D Interconnect/Integrated Circuit (IC) Technology
On the Mechanical Stresses of Cu Through-Silicon Via (TSV) Samples Fabricated by SK Hynix vs. SEMATECH – Enabling Robust and Reliable 3-D Interconnect/Integrated Circuit (IC) Technology
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DOI：
10.1016/j.proeng.2015.09.242
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发表时间：
2016
期刊：
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通讯作者：
T. Tian;Rao R. Morusupalli;Hwisu Shin;H. Son;Kwang-yoo Byun;Young‐Chang Joo;R. Caramto;L. Smith;Y. Shen;M. Kunz;N. Tamura;A. Budiman
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作者：
T. Tian;Rao R. Morusupalli;Hwisu Shin;H. Son;Kwang-yoo Byun;Young‐Chang Joo;R. Caramto;L. Smith;Y. Shen;M. Kunz;N. Tamura;A. Budiman
使用硅通孔 (TSV) 方案成功集成 3D 互连的关键因素之一是控制 Cu TSV 本身以及周围硅基板中的机械应力。与其他技术相比，同步加速器源 X 射线微衍射技术在 TSV 样品机械应力表征方面具有一些重要优势。这种方法已用于研究 SK Hynix, Inc. 早期以及最近 SEMATECH 的 Cu TSV 样品，我们发现了 Cu TSV 应力状态的有趣差异。我们对观察到的差异提出了可能的解释。这一基本认识可能会导致改善应力控制，从而提高 Cu TSV 样品的可靠性，并减少其对硅电子迁移率的影响，从而减少对器件总体性能的影响。
One of the key enablers for the successful integration of 3-D interconnects using the Through-Silicon Via (TSV) schemes is the control of the mechanical stresses in the Cu TSV itself as well as in the surrounding silicon substrate. The synchrotron-sourced X-ray microdiffraction technique has been recognized to allow some important advantages compared to other techniques in characterization of the mechanical stresses in a TSV sample. This approach have been used to study Cu TSV samples from SK Hynix, Inc. earlier as well as more recently from SEMATECH, and we have found interesting differences in the stress states of the Cu TSV. We proposed a possible explanation of the observed differences. This fundamental understanding could lead to improved stress control and hence reliability in the Cu TSV samples, as well as to reduce its impact to the silicon electron mobility and hence to device performance in general.