ELECTROSTATICS OF INTER-LANDAU-LEVEL DIODES
ELECTROSTATICS OF INTER-LANDAU-LEVEL DIODES
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DOI：
10.1103/physrevb.50.4571
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发表时间：
1994-08-15
影响因子：
3.7
通讯作者：
BAUER, GEW
中科院分区：
文献类型：
--
作者：
KHAETSKII, AV;FALKO, VI;BAUER, GEW
我们用半无限大栅覆盖的异质结中不完全耗尽的二维电子气的电势分布和密度分布，给出了静电场问题的精确解。利用这个解，我们计算了在量子化磁场存在的情况下形成的可压缩和不可压缩(绝缘)条的构型。我们讨论了我们的结果在朗道能级间和自旋二极管输运实验中的应用，以及边缘磁等离激元的传输。
We present exact solution of an electrostatic problem in terms of the potential distribution and density profile of an incompletely depleted two-dimensional electron gas in a heterostructure covered by a half-infinite gate. Using this solution, we calculate configurations of compressible and incompressible (insulating) strips that are formed in the presence of a quantizing magnetic field. We discuss the application of our results to transport experiments on the inter-Landau-level and spin diodes, as well as edge-magnetoplasmon propagation.