Ambipolar organic field-effect transistor based on an organic heterostructure
Ambipolar organic field-effect transistor based on an organic heterostructure
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DOI：
10.1063/1.1702141
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发表时间：
2004-05-15
影响因子：
3.2
通讯作者：
Riess, W
中科院分区：
文献类型：
--
作者：
Rost, C;Gundlach, DJ;Riess, W
双极性电荷注入和传输是有机场效应晶体管（OFET）发光的先决条件。然而，有机材料通常表现出单极电荷载流子传输特性。因此，基于单一材料作为有源层的有机薄膜场效应晶体管通常可以作为p沟道器件或n沟道器件操作。在这篇文章中，我们表明，通过使用并五苯作为空穴传输和N，N ′-Ditridecylperylene-3，4，9，10-tetracarboxylic diimide（PTCDI-C_（13）H_（27））作为电子传输材料的异质结构，双极性特性，即，可以在单个器件中观察到同时的p沟道和n沟道形成。研究了OFET结构，其中电子和空穴分别从Mg顶部和Au底部接触注入PTCDI-C13 H27和并五苯层。器件的电子和空穴迁移率分别为3 × 10 ~（-3）和1 × 10 ~（-4）cm ~（2）/Vs。该器件架构用作双极型场效应晶体管的模型结构，这是发光场效应晶体管的先决条件。(C)2004年，美国物理学会。
Ambipolar charge injection and transport are a prerequisite for a light-emitting organic fieldeffect transistor (OFET). Organic materials, however, typically show unipolar charge-carrier transport characteristics. Consequently, organic thin-film field-effect transistors based on a single material as active layer can typically either be operated as p- or as n-channel device. In this article we show that by using a heterostructure with pentacene as hole-transport and N,N'-Ditridecylperylene-3,4,9,10-tetracarboxylic diimide (PTCDI-C13H27) as electron-transport material, ambipolar characteristics, i.e., simultaneous p- and n-channel formation, can be observed in a single device. An OFET structure is investigated in which electrons and holes are injected from Mg top and Au bottom contacts into the PTCDI-C13H27 and pentacene layers, respectively. Our device exhibits electron and hole mobilities of 3x10(-3) and 1x10(-4) cm(2)/V s, respectively. This device architecture serves as a model structure for ambipolar field-effect transistors, which are a prerequisite for light-emitting field-effect transistors. (C) 2004 American Institute of Physics.