Modification of InAs quantum dot structure by the growth of the capping layer
Modification of InAs quantum dot structure by the growth of the capping layer
复制标题
DOI：
10.1063/1.121719
复制
发表时间：
1998-07-06
影响因子：
4
通讯作者：
Ritchie, DA
中科院分区：
文献类型：
--
作者：
Lian, GD;Yuan, J;Ritchie, DA
用透射电子显微镜和扫描透射电子显微镜研究了GaAs量子阱结构中间插入的InAs量子点。我们发现，生长条件的覆盖层上的InAs点可以导致急剧变化的点的结构。我们属性的变化的组合因素，如优先生长的覆盖层以上的润湿层，因为应变的表面和InAs点在高温下的热不稳定性。结果表明，通过适当操纵覆盖层生长条件，受控升华可以是改善自组织量子点结构的有效工具，并且可以帮助定制它们的物理特性以满足器件应用的任何特定要求。(C)1998年美国物理学会。
InAs quantum dots inserted at the middle of a GaAs quantum well structure have been investigated by transmission electron microscopy and scanning transmission electron microscopy. We find that the growth condition of the overlayer on the InAs dots can lead to drastic changes in the structure of the dots. We attribute the changes to a combination of factors such as preferential growth of the overlayer above the wetting layers because of the strained surfaces and to the thermal instability of the InAs dots at elevated temperature. The result suggests that controlled sublimation, through suitable manipulation of the overlayer growth conditions, can be an effective tool to improve the structure of the self-organized quantum dots and can help tailor their physical properties to any specific requirements of the device applications. (C) 1998 American Institute of Physics.