Grain boundary defect compensation in Ti-doped BaFe0.5Nb0.5O3 ceramics
Grain boundary defect compensation in Ti-doped BaFe0.5Nb0.5O3 ceramics
复制标题
Ti掺杂BaFe0.5Nb0.5O3陶瓷中的晶界缺陷补偿
DOI：
10.1007/s00339-016-0407-y
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发表时间：
2016-09-01
影响因子：
2.7
通讯作者：
Liu, Laijun
中科院分区：
文献类型：
--
作者：
Sun, Xiaojun;Deng, Jianming;Liu, Laijun
采用传统固相反应法制备了Ba（Nb0.5Fe0.5-xTix）O3（BNFT）巨介电陶瓷。X射线衍射分析表明，陶瓷的晶体结构为中心对称的立方晶系，空间群为Pm-3 m。在室温下，在40 Hz至100 MHz的频率范围内测量了BNFT陶瓷的介电常数和介电损耗的真实的部分（tanδ）。所有这些样本的（λ ′）显示出高值（~6500）和从1 kHz到1 MHz的小频率依赖性。我们已经建立了电导率激活能和晶界缺陷补偿之间的联系。Ti ~（4+）掺杂对Ba（Nb_（0.5）Fe_（0.5））O_3陶瓷的晶界行为有很大影响，限制了氧空位的迁移，降低了介质损耗因子。
Giant dielectric ceramics Ba(Nb0.5Fe0.5-xTix)O3 (BNFT) have been fabricated by a conventional solid-state reaction. According to X-ray diffraction analysis, the crystal structure of these ceramics can be described by the cubic centrosymmetric with Pm-3m space group. The real part (ε’) of dielectric permittivity and dielectric loss (tanδ) of the BNFT ceramics was measured in a frequency range from 40 Hz to 100 MHz at room temperature. The (ε’) of all these samples displays a high value (~6500) and a small frequency-dependence from 1 kHz to 1 MHz. We have established a link between conductivity activation energy and defect compensation at grain boundaries. The Ti4+-doped Ba(Nb0.5Fe0.5)O3 as a donor makes a great influence on the grain boundary behavior, which restricts the migration of oxygen vacancy and depresses dielectric loss factor for Ba(Nb0.5Fe0.5)O3 ceramics.