Status of AlGaN based focal plane arrays for UV solar blind detection
Status of AlGaN based focal plane arrays for UV solar blind detection
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DOI：
10.1117/12.625223
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发表时间：
2005-10
期刊：
影响因子：
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通讯作者：
J. Reverchon;G. Mazzeo;A. Dussaigne;J. Duboz
中科院分区：
文献类型：
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作者：
J. Reverchon;G. Mazzeo;A. Dussaigne;J. Duboz
氮化物的快速发展为研究AlGaN作为紫外日盲探测材料提供了机会，与基于光电阴极、MCP增强器、背减薄CCD或混合CMOS焦平面阵列的技术竞争。所有这些都必须与紫外线阻挡过滤器相关联。这些新的探测器在室温下既有固有的光谱选择性，又有极低的暗电流。首先，我们将介绍AlGaN基器件的最终特性。这些光谱特性进行了分析，关于280 nm左右的日盲探测所需的急剧截止，我们将量化如何实现日盲滤波器的严格困难可以减少。我们还研究了肖特基二极管或金属-半导体-金属（MSM）技术检测极低UV信号的电气能力。我们将特别介绍基于CCD读出多路复用器的线性阵列的结果。
The fast development of nitrides has given the opportunity to investigate AlGaN as a material for ultraviolet solar blind detection in competition with technologies based on photocathodes, MCP intensifiers, back thinned CCD or hybrid CMOS focal plane arrays. All of the them must be associated to UV blocking filters. These new detectors present both an intrinsic spectral selectivity and an extremely low dark current at room temperature. First we will present the ultimate properties of the AlGaN based devices. These spectral properties are analysed in regards to the sharp cut off required for solar blind detection around 280nm, and we will quantify how the stringent difficulties to achieve solar blind filters can be reduced. We also investigated the electrical capabilities of Schottky diodes or Metal-Semiconductor-Metal (MSM) technologies to detect extremely low UV signal. We will especially present results from a linear array based on a CCD readout multiplexor.