Diode lasers with asymmetric waveguide and improved beam properties
Diode lasers with asymmetric waveguide and improved beam properties
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具有非对称波导和改进光束特性的二极管激光器
DOI：
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发表时间：
2010
期刊：
影响因子：
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通讯作者：
L. Shterengas
中科院分区：
文献类型：
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作者：
Jianfeng Chen;G. Kipshidze;L. Shterengas
将1.95 μm GaAs基半导体激光器的快轴光束发散角减小到42°半高宽。 由于非对称波导结构的发展，激光器的光束特性得到了改善。近场几乎完全扩展到n-包层的折射率步骤在相应的heterointeraface减少。波导芯和n-包层之间的带偏移的相关减少通过引入薄的载流子停止层来平衡。多模100 μm宽脊形波导激光器在20 °C、8A下的连续波输出功率约为1.5W。
Fast axis beam divergence of 1.95 μm GaSb-based diode lasers was reduced to 42° of full-width-at-half-maximum. The beam properties were improved thanks to development of efficient laser heterostructure with asymmetric waveguide. Near field was expanded almost exclusively into n-cladding by reduction in the refractive index step at the corresponding heterointeraface. The related reduction in the band offset between waveguide core and n-cladding was balanced by introduction of the thin carrier stopper layer. Multimode 100 μm wide ridge waveguide lasers demonstrated continuous wave output power of about 1.5 W at 8 A at 20 °C.