Identification and modulation of electronic band structures of single-phase β-(AlxGa1-x)2O3 alloys grown by laser molecular beam epitaxy
Identification and modulation of electronic band structures of single-phase β-(AlxGa1-x)2O3 alloys grown by laser molecular beam epitaxy
复制标题
激光分子束外延生长单相β-(AlxGa1-x)(2)O-3合金电子能带结构的识别和调制
DOI：
10.1063/1.5027763
复制
发表时间：
2018-07-23
影响因子：
4
通讯作者：
Ye, Jiandong
中科院分区：
文献类型：
--
作者：
Li, Jing;Chen, Xuanhu;Ye, Jiandong
了解（AlxGa1-x）(2)O-3合金的能带结构演变，对于开发基于ga2o3的电力电子器件和真空紫外超辐射硬探测器具有重要意义。在这里，我们报道了β -(AlxGa1-x)(2)O-3薄膜的带隙工程，并通过吸收光谱分析和密度泛函理论计算相结合的方法鉴定了成分相关的电子带结构。单斜β相（AlxGa1-x）(2)O-3 (0
Understanding the band structure evolution of (AlxGa1-x)(2)O-3 alloys is of fundamental importance for developing Ga2O3-based power electronic devices and vacuum ultraviolet super-radiation hard detectors. Here, we report on the bandgap engineering of beta-(AlxGa1-x)(2)O-3 thin films and the identification of compositionally dependent electronic band structures by a combination of absorption spectra analyses and density functional theory calculations. Single-monoclinic beta-phase (AlxGa1-x)(2)O-3 (0