Plasma-immersion ion-processed boron-doped diamond-like carbon films
Plasma-immersion ion-processed boron-doped diamond-like carbon films
复制标题
等离子体浸没离子处理硼掺杂类金刚石碳薄膜
DOI：
10.1088/0953-8984/12/8/105
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发表时间：
2000
期刊：
影响因子：
--
通讯作者：
M. Nastasi
中科院分区：
文献类型：
--
作者：
Xiao;K. Walter;M. Nastasi
采用感应射频Ar + C2 H2 + B2 H6等离子体浸没离子处理（PIIP）技术制备了硼掺杂类金刚石（DLC）。新的结果表明，B掺入降低应力和低能量的Ar离子的冲击抑制的B掺杂的DLC膜中的氢的量的增加。掺杂量为4 ~ 10at.%的DLC膜具有较高的硬度（24.6 ~ 28 GPa）和较低的应力B。发现B掺杂增加了DLC膜中的sp3碳和sp3 CH键，并与性能的增强相关。
Boron-doped diamond-like carbon (DLC) was prepared using an inductive radio-frequency Ar + C2 H2 + B2 H6 plasma-immersion ion-processing (PIIP) technique. The novel results show that B incorporation reduces the stress and that low-energy Ar-ion impingement suppresses the increase of the amount of hydrogen in the B-doped DLC film. An optimal combination of higher hardness, 24.6 - 28 GPa, and reduced stress was reached in DLC film doped with 4 to 10 at.% B. An increase in the sp3 carbon and sp3 CH bonding in the DLC films was found with B doping and was correlated with the enhancement of the properties.