Low-voltage, high-performance organic field-effect transistors with an ultra-thin TiO2 layer as gate insulator
Low-voltage, high-performance organic field-effect transistors with an ultra-thin TiO2 layer as gate insulator
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DOI：
10.1002/adfm.200400570
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发表时间：
2005-06-01
影响因子：
19
通讯作者：
Grell, M
中科院分区：
文献类型：
--
作者：
Majewski, LA;Schroeder, R;Grell, M
我们报告了我们在使用超薄阳极氧化栅绝缘体的有机场效应晶体管(OFET)方面的最新进展。钛的阳极氧化是一种非常廉价和简单的技术，可以获得高质量、非常薄(类似于75 nm)、无针孔和坚固的用于OFET的栅绝缘体。在使用并五苯和聚三芳胺(PTAA)作为有源层的晶体管中进行了阳极氧化绝缘子的测试。制作的器件具有低阈值、正常关断的OFET，具有可忽略的磁滞、良好的载流子迁移率、高的栅电容和极低的反向亚阈值。坡度。通过用十八烷基三氯硅烷(OTS)自组装单分子膜(SAM)对二氧化钛进行化学修饰，提高了器件性能。由于这些优良特性的结合，我们已经展示了可以在远低于1V的电压下运行的OFET。
We report on our latest improvements in organic field-effect transistors (OFETs) using ultra-thin anodized gate insulators. Anodization of titanium (Ti) is an extremely cheap and simple technique to obtain high-quality, very thin (similar to 75 nm), pinhole-free and robust gate insulators for OFETs. The anodized insulators have been tested in transistors using pentacene and poly(triarylamine) (PTAA) as active layers. The fabricated devices display low-threshold, normally "off" OFETs with negligible hysteresis, good carrier mobility, high gate capacitance, and exceptionally low inverse subthreshold. slope. Device performance is improved via chemical modification of TiO2 with an octadecyltrichlorosilane (OTS) self-assembled monolayer (SAM). As the result of this combination of favorable properties, we have demonstrated OFETs that can be operated with voltages well below 1 V.