Passivation and interface state density of SiO2/HfO2-based/polycrystalline-Si gate stacks
Passivation and interface state density of SiO2/HfO2-based/polycrystalline-Si gate stacks
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DOI：
10.1063/1.1592639
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发表时间：
2003-07
影响因子：
4
通讯作者：
R. Carter;E. Cartier;A. Kerber;L. Pantisano;T. Schram;S. Gendt;M. Heyns
中科院分区：
文献类型：
--
作者：
R. Carter;E. Cartier;A. Kerber;L. Pantisano;T. Schram;S. Gendt;M. Heyns
我们证明，与通常用于SiO2/多晶硅栅极堆叠的420 °C退火相比，520 °C的形成气体退火温度显著改善了SiO2/HfO 2基/多晶硅栅极堆叠的界面态钝化。我们还表明，初始界面态密度取决于界面SiO2的制备，从而化学生长的氧化物具有较高的初始界面态密度相比，热生长的氧化物。
We demonstrate that a forming gas annealing temperature of 520 °C significantly improves interface state passivation for SiO2/HfO2-based/polycrystalline-Si gate stacks as compared to annealing at 420 °C normally used for SiO2/polycrystalline-Si gate stacks. We also show that the initial interface state density is dependent upon the interfacial SiO2 preparation, whereby a chemically grown oxide has a higher initial interface state density as compared to a thermally grown oxide.