TDDB Measurement of Gate SiO2 on 4H-SiC Formed by Chemical Vapor Deposition
TDDB Measurement of Gate SiO2 on 4H-SiC Formed by Chemical Vapor Deposition
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化学气相沉积形成的 4H-SiC 上栅极 SiO2 的 TDDB 测量
DOI：
10.4028/www.scientific.net/msf.600-603.799
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发表时间：
2008
期刊：
影响因子：
--
通讯作者：
T. Oomori
中科院分区：
文献类型：
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作者：
K. Fujihira;Shohei Yoshida;N. Miura;Y. Nakao;M. Imaizumi;T. Takami;T. Oomori
通过 CCS-TDDB 测量研究了 CVD 栅极氧化物的可靠性，并与热生长栅极氧化物进行了比较。尽管对于较大的氧化物区域，热氧化物的 QBD 会变小，但 CVD 氧化物的 QBD 几乎与所研究的栅极氧化物区域无关。对于 1 mA/cm2 下 1.96×10-3 cm2 的面积，F = 50% CVD 氧化物 (3 C/cm2) 时的 QBD 比热氧化物大两个数量级。超过 80% 的 CVD 氧化物击穿发生在场氧化物边缘，超过 70% 的热氧化物击穿发生在内栅极区域。这些结果表明，CVD 氧化物的寿命几乎不受 SiC 质量的影响，而 SiC 中的缺陷和/或杂质则影响热生长氧化物的寿命。
The reliability of CVD gate oxide was investigated by CCS-TDDB measurement and compared with thermally grown gate oxide. Although the QBD of thermal oxide becomes smaller for the larger oxide area, the QBD of CVD oxide is almost independent of the investigated gate oxide area. The QBD at F = 50% of CVD oxide, 3 C/cm2, is two orders of magnitude larger for the area of 1.96×10-3 cm2 at 1 mA/cm2 compared to that of thermal oxide. More than 80% of the CVD oxide breakdown occurs at the field oxide edge and more than 70% of the thermal oxide breakdown in the inner gate area. These results suggest that the lifetime of CVD oxide is hardly influenced by the quality of SiC, while the defects and/or impurities in SiC affect the lifetime of thermally grown oxide.