Electron channelling contrast imaging for III-nitride thin film structures
Electron channelling contrast imaging for III-nitride thin film structures
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DOI：
10.1016/j.mssp.2016.02.007
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发表时间：
2016-06-01
影响因子：
4.1
通讯作者：
Trager-Cowan, C.
中科院分区：
文献类型：
--
作者：
Naresh-Kumar, G.;Thomson, D.;Trager-Cowan, C.
在扫描电子显微镜（SEM）中进行的电子通道对比度成像（ECCI）是一种快速且非破坏性的结构表征技术，用于成像、识别和量化晶体材料中的扩展缺陷。在这篇综述中，我们将展示ECCI的应用程序的III-氮化物半导体薄膜生长在不同的衬底上，并具有不同的晶体取向的特性。我们将简要描述电子通道背后的历史和理论，以及执行ECCI所需的实验装置和条件。我们将讨论使用ECCI的优点，特别是与其他基于SEM的技术，如阴极发光成像相结合。最后简要讨论了ECCI在应用中面临的挑战。(C)2016年6月，作者。由Elsevier Ltd.发布。这是CC BY许可下的开放获取文章。
Electron channelling contrast imaging (ECCI) performed in a scanning electron microscope (SEM) is a rapid and non-destructive structural characterisation technique for imaging, identifying and quantifying extended defects in crystalline materials. In this review, we will demonstrate the application of ECCI to the characterisation of III-nitride semiconductor thin films grown on different substrates and with different crystal orientations. We will briefly describe the history and the theory behind electron channelling and the experimental setup and conditions required to perform ECCI. We will discuss the advantages of using ECCI, especially in combination with other SEM based techniques, such as cathodoluminescence imaging. The challenges in using ECCI are also briefly discussed. (C) 2016 The Authors. Published by Elsevier Ltd. This is an open access article under the CC BY license.