Temperature dependence of the photoreflectance of a strained layer (001) In0.21Ga0.79As/GaAs single quantum well
Temperature dependence of the photoreflectance of a strained layer (001) In0.21Ga0.79As/GaAs single quantum well
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DOI：
10.1063/1.349706
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发表时间：
1991-12
影响因子：
3.2
通讯作者：
Ying-Sheng Huang;H. Qiang;F. Pollak;G. Pettit;P. Kirchner;J. Woodall;Hans Stragier;L. Sorensen
中科院分区：
文献类型：
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作者：
Ying-Sheng Huang;H. Qiang;F. Pollak;G. Pettit;P. Kirchner;J. Woodall;Hans Stragier;L. Sorensen
在10 K<T<500 K的温度范围内，测量了应变层（001）In_（0.21）Ga_（0.79）As/GaAs单量子阱的光反射谱。基本传导到重空穴特征（11 H）的线形细节表明其激子性质，甚至高达500 K。从11 H线宽的温度依赖性，我们已经获得了重要的信息的质量的材料和界面。11 H能隙随温度的变化规律与体材料的变化规律一致。11 H和更高能级跃迁的能量与包络函数计算的比较得出导带偏移参数Qc=0.65±0.07。
We have measured the photoreflectance spectra of a strained layer (001) In0.21Ga0.79As/GaAs single quantum well as a function of temperature in the range 10 K<T<500 K. The details of the lineshape of the fundamental conduction to heavy‐hole feature (11H) demonstrates its excitonic nature even up to 500 K. From the temperature dependence of the 11H linewidth we have obtained important information about the quality of the material and interface. The variation of the 11H energy gap with temperature agrees with that of bulk material. Comparison of the energies of 11H and higher lying transitions with an envelope function calculation yields a conduction band offset parameter Qc=0.65±0.07.