Optical Polarization Anisotropy of Nonpolar InN Epilayers
Optical Polarization Anisotropy of Nonpolar InN Epilayers
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非极性 InN 外延层的光学偏振各向异性
DOI：
10.1002/pssa.200983657
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发表时间：
2010
期刊：
影响因子：
--
通讯作者：
T. Arakiand Y. Nanishi
中科院分区：
文献类型：
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作者：
K. Wang;T. Yamaguchi;A. Takeda;T. Kimura;K. Kawashima;T. Arakiand Y. Nanishi
研究了博塔面和m面InN外延层的光致发光（PL）强度与偏振角的关系。对于平面InN，垂直于c轴的偏振态（E_c）的光致发光强度是平行于c轴的偏振态（E//c）的光致发光强度的四倍，而这一比值是平面InN的七倍。两种偏振的a面样品的吸收边相隔19 meV，其中（E//c）位于高能侧。从样品边缘检测到的光致发光也显示出这种各向异性。对一系列a-平面样品的X射线衍射实验表明，考虑到晶格的正交畸变，一些样品沿着生长方向存在压应变，而另一些样品的应变可以忽略不计。通过测量应变，通过将实验结果与计算的跃迁能和相对振子强度（包括各向异性面内应变）进行比较，分析了偏振各向异性。
Photoluminescence (PL) intensity of botha‐plane andm‐plane InN epilayers has been observed to strongly depend on polarization angle. The PL intensity for polarization perpendicular toc‐axis (E⟂c) is up to four times as that of polarization parallel toc‐axis (E//c) fora‐plane InN, and this ratio is up to seven times form‐plane InN. The absorption edges ofa‐plane samples for the two polarizations are separated by 19 meV, with (E//c) at higher energy side. The PL detected from sample edge also shows such anisotropy. X‐ray diffraction experiments for a series ofa‐plane samples, taking orthorhombic distortion of lattice into account, have shown some samples are compressively strained along growth direction and others have negligible strain. With measured strain, the polarization anisotropy has been analyzed by comparing the experimental results with calculated transition energies and relative oscillator strengths including anisotropic in‐plane strain.