A promising routine to fabricate GeSi nanowires via self-assembly on miscut Si (001) substrates.
A promising routine to fabricate GeSi nanowires via self-assembly on miscut Si (001) substrates.
复制标题
通过在误切 Si (001) 衬底上自组装来制造 GeSi 纳米线的一种有前景的方法
DOI：
10.1186/1556-276x-6-322
复制
发表时间：
2011-04-11
影响因子：
--
通讯作者：
Jiang Z
中科院分区：
文献类型：
--
作者：
Zhong Z;Gong H;Ma Y;Fan Y;Jiang Z
在Ge的沉积过程中，非常小且排列紧密的GeSi纳米线可以在与Si（001）衬底成约8°夹角的邻位Si（001）衬底上自组装。纳米线都是沿着错切方向取向。纳米线的高度与宽度的小比率表明纳米线部分地与{1 0 5}面邻接。这些自组装的小纳米线的生长条件和衬底的斜切角显着的影响相比，大的圆顶状岛屿后得到足够的Ge沉积。这些结果表明，纳米线的形成是在生长动力学辅助下被能量驱动的。首次通过Si间隔层生长Ge多层膜实现了GeSi纳米线的三维自组装。这些GeSi纳米线易于嵌入Si基体中，并与复杂的Si工艺兼容，这为制备纳米线的基础研究和广泛的应用提供了可行的策略。PACS：81.07.Gf，81.16.Dn，68.65.- k，68.37.Ps
Very small and compactly arranged GeSi nanowires could self-assembled on vicinal Si (001) substrates with ~8° off toward ⟨110⟩ during Ge deposition. The nanowires were all oriented along the miscut direction. The small ration of height over width of the nanowire indicated that the nanowires were bordered partly with {1 0 5} facets. These self-assembled small nanowires were remarkably influenced by the growth conditions and the miscut angle of substrates in comparison with large dome-like islands obtained after sufficient Ge deposition. These results proposed that the formation of the nanowire was energetically driven under growth kinetic assistance. Three-dimensionally self-assembled GeSi nanowires were first realized via multilayer Ge growth separated with Si spacers. These GeSi nanowires were readily embedded in Si matrix and compatible with the sophisticated Si technology, which suggested a feasible strategy to fabricate nanowires for fundamental studies and a wide variety of applications. PACS: 81.07.Gf, 81.16.Dn, 68.65.-k, 68.37.Ps