Threshold voltage analytic model for strained SiGe-on-insulator p-channel metal-oxide-semiconductor-field-effect-transistor
Threshold voltage analytic model for strained SiGe-on-insulator p-channel metal-oxide-semiconductor-field-effect-transistor
复制标题
绝缘体上应变 SiGe p 沟道金属氧化物半导体场效应晶体管的阈值电压分析模型
DOI：
10.7498/aps.59.8877
复制
发表时间：
2010-12
影响因子：
1
通讯作者：
Hao Yue1
中科院分区：
文献类型：
--
作者：
Liu Hong-Xia1;Yin Xiang-Kun1;Liu Bing-Jie1;Hao Yue1
分析研究了应变绝缘层上硅锗p型金属氧化物场效应晶体管(SGOI pMOSFET)的阈值电压模型,修正了应变作用下SGOI pMOSFET的能带模型,并提取了主要的物理参量.这些参数包括能隙、电子亲和势、建立电势等，本文还给出了应变硅SGOI pMOSFET中建立电势的二维Possion s方程。利用边界条件求解这些方程，建立了一个精确的阈值电压解析模型，并验证了该模型的有效性。
This paper investigates the threshold voltage analytic model of strained SiGe-on-insulator p-channel metal-oxide-semiconductor-field-effect-transistor (SGOI pMOSFET), revises the energy band model of strained-silicon, and extracts the main physical parameters of strained-SiGe devices. These parameters include the energy gap, electron affinity, build-up potential, etc. In this paper, the two-dimensional Possions equation of build-in potential in strained silicon SGOI pMOSFET is also presented. By using the boundary conditions to solve these equations, an accurate threshold voltage analytic model is proposed and its validity is verified.