Spin injection into silicon in three-terminal vertical and four-terminal lateral devices with Fe/Mg/MgO/Si tunnel junctions having an ultrathin Mg insertion layer
Spin injection into silicon in three-terminal vertical and four-terminal lateral devices with Fe/Mg/MgO/Si tunnel junctions having an ultrathin Mg insertion layer
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DOI：
10.1103/physrevb.96.235204
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发表时间：
2017-12-18
影响因子：
3.7
通讯作者：
Tanaka, Masaaki
中科院分区：
文献类型：
--
作者：
Sato, Shoichi;Nakane, Ryosho;Tanaka, Masaaki
我们证明，自旋注入/提取效率提高了一个Mg-Mg插入层，
We demonstrate that the spin injection/extraction efficiency is enhanced by an ultrathin Mg insertion layer (