Epitaxial growth and characterization of approximately 300-nm-thick AlInN films nearly lattice-matched to c-plane GaN grown on sapphire
Epitaxial growth and characterization of approximately 300-nm-thick AlInN films nearly lattice-matched to c-plane GaN grown on sapphire
复制标题
与蓝宝石上生长的 c 面 GaN 几乎晶格匹配的约 300 nm 厚的 AlInN 薄膜的外延生长和表征
DOI：
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发表时间：
2018
期刊：
影响因子：
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通讯作者：
T. Takeuchi
中科院分区：
文献类型：
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作者：
M. Miyoshi;M. Yamanaka;T. Egawa;T. Takeuchi
采用金属有机化学气相沉积方法生长了与c面蓝宝石GaN模板几乎晶格匹配的AlIn外延薄膜，薄膜厚度可达约300 nm。AlIn薄膜表现出相对较好的晶体质量和平坦的表面，尽管存在与底层GaN薄膜中的位错相连接的表面凹坑。在本研究中得到的折射率与以前报道的在整个可见光波长区得到的结果吻合得很好。消光系数谱显示出清晰的吸收边，AlIn与GaN的禁带宽度约为4.0 eV。
AlInN epitaxial films with film thicknesses up to approximately 300 nm were grown nearly lattice-matched to a c-plane GaN-on-sapphire template by metalorganic chemical vapor deposition. The AlInN films showed relative good crystal qualities and flat surfaces, despite the existence of surface pits connected to dislocations in the underlying GaN film. The refractive index derived in this study agreed well with a previously reported result obtained over the whole visible wavelength region. The extinction coefficient spectrum exhibited a clear absorption edge, and the bandgap energy for AlInN nearly lattice-matched to GaN was determined to be approximately 4.0 eV.