Dislocation-free and lattice-matched Si/GaP1−xNx/Si structure for photo-electronic integrated systems
Dislocation-free and lattice-matched Si/GaP1−xNx/Si structure for photo-electronic integrated systems
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用于光电集成系统的无位错和晶格匹配的 Si/GaP1−xNx/Si 结构
DOI：
10.1063/1.1425451
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发表时间：
2001
影响因子：
4
通讯作者：
K. Aiki
中科院分区：
文献类型：
--
作者：
K. Momose;H. Yonezu;Y. Fujimoto;Y. Furukawa;Y. Motomura;K. Aiki
提出了一种适用于光电集成电路的Si/III-V-N化合物半导体/Si结构。该结构的特点是可以通过低温平面工艺同时制作光电子器件和硅电子器件。通过分子束外延生长了无位错和晶格匹配的Si/GaP1 − xNx/Si（x = 2.9%）结构，这是OEIC的基本结构。透射电子显微镜的图像显示，在外延层中没有出现穿线位错和失配位错。结果表明，Si和GaP1 − xNx层与Si晶格匹配，并且具有与Si衬底相当的结构高结晶质量。
We proposed a Si/III–V–N compound semiconductors/Si structure, which is applicable to optoelectronic integrated circuits (OEICs). The feature of this structure is that optoelectronic devices and Si electronic devices could be fabricated by low-temperature planar process at the same time. A dislocation-free and lattice-matched Si/GaP1−xNx/Si (x=2.9%) structure, which is a basic structure for OEICs, was grown by molecular-beam epitaxy. The images of transmission electron microscopy revealed that there were no threading dislocations and misfit dislocations in the epitaxial layers. It was clarified that the Si and GaP1−xNx layers were lattice-matched to Si and had structural high crystalline quality comparable to Si substrates.