Overcoming SU-8 stiction in high aspect ratio structures
Overcoming SU-8 stiction in high aspect ratio structures
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DOI：
10.1007/s00542-004-0488-y
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发表时间：
2005-02
期刊：
影响因子：
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通讯作者：
A. G. Peele;A. G. Peele;B. Shew;K. Vora;H. C. Li
中科院分区：
文献类型：
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作者：
A. G. Peele;A. G. Peele;B. Shew;K. Vora;H. C. Li
深X射线光刻是一种用于制造高深宽比结构(HARS)的著名技术。然而，众所周知，在制造一些HARs时会出现困难；已开发的抗蚀剂结构与电镀基座的粘合通常会失败，并且当抗蚀剂结构密集堆积时，特征可能会聚集在一起。这反过来又会加剧粘连失败。结块的问题有时被称为粘连。在这篇文章中，我们描述了一种涉及低剂量紫外线二次曝光的想法，它可以帮助克服某些设计中的粘滞，从而提高设计结构的粘附性和保持性。
Deep X-ray lithography is a well known technique used for making high aspect ratio structures (HARS). However, well known difficulties arise in the creation of some HARS; adhesion of the developed resist structures to the plating base commonly fails, and when resist structures are densely packed features can clump together. This in turn can exacerbate adhesion failure. The problem of clumping is sometimes known as stiction. In this paper we describe an idea involving a low dose UV second exposure that can help overcome stiction in certain designs and thus promote adhesion and the retention of the designed structure.