The Electronegativity Analysis of c-C4F8 as a Potential Insulation Substitute of SF6
The Electronegativity Analysis of c-C4F8 as a Potential Insulation Substitute of SF6
复制标题
c-C4F8 作为 SF6 潜在绝缘替代品的电负性分析
DOI：
10.1088/1009-0630/18/3/13
复制
发表时间：
2016
影响因子：
1.7
通讯作者：
Xiao DM
中科院分区：
文献类型：
--
作者：
Zhao Xiaoling;Jiao Juntao;Li Bing;Xiao Dengming;Xiao DM
从理论上推导了cC 4F 8气体在面-面和点-面两种电极结构中与气体电负性有关的密度分布，包括放电过程中的负离子密度、电子数密度和电子能量密度.这些计算是在稳态汤森（SST）实验条件下通过玻尔兹曼方程和在均匀和非均匀电场条件下通过流体模型进行的。比较了cC 4F 8和SF6的电负性系数a= n-/ne，进一步描述了cC 4F 8的电子亲和势.结果表明，cC 4F 8在放电过程中表现出明显的电子附着性能。但cC 4 F 8仍具有比SF 6弱得多的气体电负性，其电负性系数比SF 6低至少三个数量级。
The density distributions related to gas electronegativity for cC 4 F 8 gas, including negative ion, electron number and electron energy densities in the discharge process, are derived theoretically in both plane-to-plane and point-to-plane electrode geometries. These calculations have been performed through the Boltzmann equation in the condition of a steady-state Townsend (SST) experiment and a fluid model in the condition of both uniform and non-uniform electric fields. The electronegativity coefficients a= n−/n e of cC 4 F 8 and SF 6 are compared to further describe the electron affinity of cC 4 F 8. The result shows that cC 4 F 8 represents an obvious electron-attachment performance in the discharge process. However, cC 4 F 8 still has much weaker gas electronegativity than SF 6, whose electronegativity coefficient is lower than that of SF 6 by at least three orders of magnitude.