Homo-Junction pn Diode Using p-Type SnO and n-Type SnO2 Thin Films
Homo-Junction pn Diode Using p-Type SnO and n-Type SnO2 Thin Films
复制标题
DOI：
10.1149/2.0051408ssl
复制
发表时间：
2014
影响因子：
--
通讯作者：
J. Um;S. Kim
中科院分区：
文献类型：
--
作者：
J. Um;S. Kim
氧化锡薄膜在器件应用中具有重要的意义，但尽管其具有良好的光学透明性和出色的半导体性能，但仍需要开发稳定的p型氧化锡。在这项研究中，p型和n型氧化锡薄膜的沉积反应射频磁控溅射使用锡靶在Ar和O2气体的混合物。分析了p型SnO和n型SnO2薄膜的结构、电学和光学性质。制作了透明同质结pn二极管，其导通电压为2.3V，具有较好的整流特性。
Tin oxide thin films are of great interest for device applications, but in spite of their good optical transparency and outstanding semiconductor properties, stable p-type tin oxide needs to be developed. In this study both p-type SnO and n-type SnO2 thin films were deposited by reactive rf magnetron sputtering using Sn target in Ar and O2 gas mixture. The structural, electrical, and optical properties of both p-type SnO and n-type SnO2 thin films were analysed. The transparent homo-junction pn diode was also fabricated and it showed a fairly good rectification behavior with a turn-on voltage of 2.3 V.