Nonpolar 4H-AlN grown on 4H-SiC (11¯00) with reduced stacking fault density realized by persistent layer-by-layer growth
Nonpolar 4H-AlN grown on 4H-SiC (11¯00) with reduced stacking fault density realized by persistent layer-by-layer growth
复制标题
DOI：
10.1063/1.2976559
复制
发表时间：
2008-08
影响因子：
4
通讯作者：
M. Horita;T. Kimoto;J. Suda
中科院分区：
文献类型：
--
作者：
M. Horita;T. Kimoto;J. Suda
Nonpolar AlN layers were grown on 4H-SiC (11¯00) substrates by plasma-assisted molecular-beam epitaxy. By using SiC substrates with well-formed step-and-terrace structures, stable layer-by-layer growth of 4H-AlN (11¯00) can be realized. The layer-by-layer growth is confirmed by observations of anisotropic two-dimensional AlN islands on the grown surface as well as persistent reflection high-energy electron diffraction intensity oscillations. Cross-sectional transmission electron microscopy observations reveal that stacking fault generation during growth is suppressed and the stacking fault density is reduced to 1×106 cm−1.
