Near-neighbor configuration and impurity-cluster size distribution in a Poisson ensemble of monovalent impurity atoms in semiconductors
Near-neighbor configuration and impurity-cluster size distribution in a Poisson ensemble of monovalent impurity atoms in semiconductors
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半导体中单价杂质原子泊松系综中的近邻构型和杂质簇尺寸分布
DOI：
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发表时间：
1983
期刊：
影响因子：
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通讯作者：
J. D. Wiley
中科院分区：
文献类型：
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作者：
U. Edgal;J. D. Wiley
我们对半导体中泊松分布的杂质进行了一些微观（原子尺度）结构分析。分析中采用了几何概率领域成熟的相关概念和结果。还提供了半导体介质中“杂质簇”尺寸分布的蒙特卡罗结果，通过其连续体表示来近似。还提供了“杂质双峰”概率的封闭式表达式和杂质簇尺寸分布的一般公式。
We present some microscopic (atomic scale) structure analysis for Poisson-distributed impurities in semiconductors. Relevant concepts and results, well established in the area of geometrical probability, are employed in the analysis. Monte Carlo results for the distribution of "impurity-cluster" sizes in semiconductor media approximated by their continuum representation are also presented. A closed-form expression for the "impurity-doublet" probability and a general formulation for the impurity-cluster size distribution are also provided.