Current-voltage characteristics and photovoltaic effect of a Au/ZnFe2O4/GaN Schottky junction
Current-voltage characteristics and photovoltaic effect of a Au/ZnFe2O4/GaN Schottky junction
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DOI：
10.1088/1361-6463/abc8b8
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发表时间：
2021-03-04
影响因子：
3.4
通讯作者：
Dho, Joonghoe
中科院分区：
文献类型：
--
作者：
Ghimire, Santosh;Dho, Joonghoe
采用脉冲激光沉积和溅射相结合的方法制备了具有半导体异质外延ZnFe 2 O 4插入层的Au/ZnFe 2 O 4/GaN肖特基结。研究了肖特基结在黑暗、紫外光和蓝光照射下的电流-电压（I-V）和电容-电压（C-V）特性及其光伏效应。插入的半导体ZnFe_2O_4中间层明显诱导整流比的增加。基于正向偏压下的I-V测量，估算出Au/ZnFe 2 O 4/GaN结的势垒高度和理想因子分别为0.89 eV和1.58。另一方面，在反向偏置区域中的C-V测量表明类似于1.32eV的相对较大的势垒高度。Au/ZnFe 2 O 4/GaN结在紫外光下的开路电压接近0.5 V，并且在紫外光的通断过程中具有明显的光电流开关特性。提出了一个具有两个界面（Au/ZnFe 2 O 4和ZnFe 2 O 4/GaN）的能带模型来解释在正向和反向偏压区测量的势垒高度。
A Au/ZnFe2O4/GaN Schottky junction with a semiconducting heteroepitaxial ZnFe2O4 insertion layer was prepared by using a combined synthesis process of pulsed laser deposition and sputtering. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics of the Schottky junction, as well as its photovoltaic effect, were investigated under dark conditions or ultraviolet (UV) or blue illumination. Insertion of the semiconducting ZnFe2O4 interlayer clearly induced an increase in the rectification ratio. Based on I-V measurements in a forward bias region, the barrier height and ideality factor of the Au/ZnFe2O4/GaN junction were estimated to be about 0.89 eV and 1.58, respectively. On the other hand, C-V measurement in a reversed bias region suggested a relatively larger barrier height of similar to 1.32 eV. The Au/ZnFe2O4/GaN junction showed an open-circuit voltage of similar to 0.5 V under UV light and a clear switching photocurrent behavior with UV ON/OFF. A schematic band model with two interfaces, Au/ZnFe2O4 and ZnFe2O4/GaN, was proposed to explain the measured barrier heights in forward and reverse bias regions.