Enhancement of cyclotron mass in semiconductor quantum wells.
Enhancement of cyclotron mass in semiconductor quantum wells.
复制标题
半导体量子阱中回旋加速器质量的增强。
DOI：
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发表时间：
1993
期刊：
影响因子：
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通讯作者：
Moore
中科院分区：
文献类型：
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作者：
Yang;Lin;Shanabrook;Waterman;Wagner;Moore
研究了二维电子气体在被AlSb势垒夹住的InAs量子阱中的自旋分辨回旋共振，以确定有效质量的能量依赖关系。由于有效质量和Land’g因子对电子能量的线性依赖，我们观察到回旋加速器质量与填充因子相关的变化。利用四波段kensuremath{cdot}p模型下的包络函数近似对实验结果进行了分析，得到了重归一化的井内有效质量。结果与实验结果非常吻合，表明电子波函数对势垒的渗透提高了有效质量。
The spin-resolved cyclotron resonance of a two-dimensional electron gas in an InAs quantum well sandwiched by AlSb barriers has been investigated to determine the energy dependence of the effective mass. We observe variations of the cyclotron mass correlated with the filling factor due to the linear dependence of the effective mass and Land'e g factor on the electron energy. The experimental results are analyzed by the envelope-function approximation under a four-band kensuremath{cdot}p model which leads to a renormalized effective mass in the well. Excellent agreement with experiment is achieved and we are able to conclude that the effective mass is enhanced as a result of the penetration of electron wave functions into the barrier.