Monophasic TiO2 films deposited on SrTiO3(100) by pulsed laser ablation
Monophasic TiO2 films deposited on SrTiO3(100) by pulsed laser ablation
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DOI：
10.1063/1.1499522
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发表时间：
2002-09-01
影响因子：
3.2
通讯作者：
Gou, YS
中科院分区：
文献类型：
--
作者：
Hsieh, CC;Wu, KH;Gou, YS
采用原位脉冲激光沉积（PLD）技术在SrTiO3(STO)（100）衬底上制备了金红石或锐钛矿结构的单相TiO2薄膜。热力学上不利，对于直接沉积在STO（100）衬底上的薄膜，即使使用金红石型TiO2（110）衬底作为靶材，也能形成纯锐钛矿型TiO2（00l）薄膜。另一方面，通过在高于700℃的温度下原位氧化PLD TiN薄膜，获得了纯金红石型TiO2（110）薄膜。报道了制备TiN和TiO2薄膜的最佳沉积条件。研究了薄膜的晶体结构、表面形貌和电子结构。并提出了成膜过程的机理。(C) 2002年美国物理研究所。
Single phase TiO2 thin films, of either rutile or anatase structure, have been prepared on SrTiO3(STO)(100) substrates by in situ pulsed laser deposition (PLD). Thermodynamically unfavorable, for films deposited on STO(100) substrate directly, pure anatase TiO2(00l) films were formed even when a rutile TiO2(110) substrate was used as a target. On the other hand, pure rutile TiO2(110) films were obtained by oxidizing PLD TiN films in-situ at temperatures higher than 700 degreesC. The optimized deposition conditions for preparing TiN and TiO2 films were reported. The crystalline structure, surface morphology, and electronic structure of these films were examined. A mechanism of the process of film formation is also proposed. (C) 2002 American Institute of Physics.