Nonequilibrium Occupancy of Dangling Bond Defects in Undoped Amorphous Silicon Studied by Subgap-Light-Induced Electron Spin Resonance
Nonequilibrium Occupancy of Dangling Bond Defects in Undoped Amorphous Silicon Studied by Subgap-Light-Induced Electron Spin Resonance
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亚能隙光致电子自旋共振研究未掺杂非晶硅中悬挂键缺陷的非平衡占据
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发表时间：
2004
期刊：
影响因子：
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通讯作者：
K.Hattori
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文献类型：
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作者：
K.Hattori
