Systematic structural and chemical characterization of the transition layer at the interface of NO-annealed 4H-SiC/SiO2 metal-oxide-semiconductor field-effect transistors
Systematic structural and chemical characterization of the transition layer at the interface of NO-annealed 4H-SiC/SiO2 metal-oxide-semiconductor field-effect transistors
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DOI：
10.1063/1.4789924
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发表时间：
2013-01
影响因子：
3.2
通讯作者：
Joshua A. Taillon;J. Yang;C. Ahyi;J. Rozen;John R. Williams;L. Feldman;T. Zheleva;A. Lelis;L. Salamanca-Riba
中科院分区：
文献类型：
--
作者：
Joshua A. Taillon;J. Yang;C. Ahyi;J. Rozen;John R. Williams;L. Feldman;T. Zheleva;A. Lelis;L. Salamanca-Riba
我们提出了一个系统的表征过渡层在4 H-SiC/SiO2界面作为一氧化氮（NO）后退火时间的函数，使用高分辨率透射电子显微镜的结构表征和空间分辨电子能量损失谱化学分析。我们提出了一个系统的方法来确定过渡层的宽度，通过测量的单调化学位移的Si-L2，3边缘的界面，并比较其功效从文献中的传统措施，揭示所提出的方法是最可靠的。Si-L2，3边缘起始能量的逐渐移动表明过渡层中的Si-C/Si-O混合键合。我们确认NO-退火时间和过渡层宽度之间的反比关系，这与提高沟道迁移率，增强在界面处的N密度，和减少界面陷阱密度。在界面区域没有发现过量的C。
We present a systematic characterization of the transition layer at the 4H-SiC/SiO2 interface as a function of nitric oxide (NO) post-annealing time, using high-resolution transmission electron microscopy for structural characterization and spatially resolved electron energy-loss spectroscopy for chemical analysis. We propose a systematic method for determining transition layer width by measuring the monotonic chemical shift of the Si-L2,3 edge across the interface, and compare its efficacy to traditional measures from the literature, revealing the proposed method to be most reliable. A gradual shift in the Si-L2,3 edge onset energy suggests mixed Si-C/Si-O bonding in the transition layer. We confirm an inverse relationship between NO-anneal time and transition layer width, which correlates with improved channel mobility, enhanced N density at the interface, and decreased interface trap density. No excess C was noted in the interfacial region.