A close to unity and all-solar-spectrum absorption by ion-sputtering induced Si nanocone arrays
A close to unity and all-solar-spectrum absorption by ion-sputtering induced Si nanocone arrays
复制标题
通过离子溅射诱导硅纳米锥阵列实现接近统一的全太阳光谱吸收
DOI：
10.1364/oe.20.022087
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发表时间：
2012-09-24
期刊：
影响因子：
3.8
通讯作者：
Lu, Ming
中科院分区：
文献类型：
--
作者：
Qiu, Ying;Hao, Hong-Chen;Lu, Ming
采用Ar+离子溅射与金属离子共沉积相结合的方法在Si（100）表面形成了Si纳米锥阵列。硅锥的长径比随样品温度的升高而稳定增加，但随离子注入量的增加而缓慢减小。在一定温度下，硅锥的高度和底径随剂量的增加而单调增加。吸收率通常随着纵横比和高度的增加而增加。通过纳米结构的Si最终实现了接近统一的全太阳光谱吸收，其中λ = 350至1100 nm的吸收率高于96%，并且λ = 1100至2000 nm的吸收率高于92%。不同的Si样品的光电流也进行了研究。(C)2012美国光学学会
Si nanocone arrays are formed on Si(100) by Ar+ ion sputtering combined with metal ion co-deposition. The aspect ratio of Si cone is found to increases steadily with increasing sample temperature, but decreases slowly with increasing ion dose. Furthermore, the height and base diameter of Si cone increase monotonously with increasing dose at a constant temperature. The absorptivity increases in general with increasing aspect ratio and height. A close to unity and all-solar-spectrum absorption by the nanostructured Si is finally achieved, with the absorbance for lambda = 350 to 1100 nm being higher than 96%, and that for lambda = 1100 to 2000 nm higher than 92%. Photocurrents for different Si samples are also investigated. (C) 2012 Optical Society of America