Dynamics of high-voltage pulsed cylindrical sheath
Dynamics of high-voltage pulsed cylindrical sheath
复制标题
DOI：
10.1109/tps.2003.808870
复制
发表时间：
2003-04
影响因子：
1.5
通讯作者：
S. Nikiforov;Guang-Hoon Kim;G. Rim
中科院分区：
文献类型：
--
作者：
S. Nikiforov;Guang-Hoon Kim;G. Rim
建立了圆柱形等离子体浸没离子注入（PI/sup 3/）中有限上升时间阶跃偏压下无碰撞鞘层的半解析模型。该模型考虑了预鞘的形成，预测鞘过冲及其进一步恢复到稳态Child值。为了验证该模型，鞘层动力学实验研究了30 kV PI/sup 3/设置使用正偏置的朗缪尔探针技术。测量已经在电感耦合和热阴极等离子体源的氩和氦等离子体中进行。模型预测与实验结果吻合较好。
A semi-analytic model of collisionless sheath in plasma immersion ion implantation (PI/sup 3/) for a step bias with finite rise time in cylindrical geometry has been developed. The model takes into account the formation of the presheath, predicts the sheath overshooting and its further recovery to the steady-state Child value. To verify the model, a sheath dynamics has been investigated experimentally on a 30-kV PI/sup 3/ setup using the positively biased Langmuir probe technique. The measurements have been carried out in argon and helium plasmas of inductively coupled and hot cathode plasma sources. The model predictions agreed well with the experimental results.