Post-polymerization modification of PS-b-PMMA for achieving directed self-assembly with sub-10nm feature size
Post-polymerization modification of PS-b-PMMA for achieving directed self-assembly with sub-10nm feature size
复制标题
PS-b-PMMA 的后聚合改性可实现亚 10nm 特征尺寸的定向自组装
DOI:
10.1117/12.2515933
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发表时间:
2019
期刊:
影响因子:
--
通讯作者:
Satoh Toshifumi
中科院分区:
文献类型:
--
作者:
Isono Takuya;Yoshida Kohei;Mamiya Hiroaki;Miyagi Ken;Yamazaki Akiyoshi;Satoh Toshifumi
This paper describes the ester-amide exchange reaction for the facile and efficient post-polymerization modification of polystyrene-block-poly(methyl methacrylate) (PS-b-PMMA) to produce high-χ/low-N PS-b-PMMA analogues that exhibit a microphase separation with features on a sub-10 nm scale. Various amines were used for the ester-amide exchange reaction to introduce a small number of methacrylamide units into the PMMA block of the parent PS-b- PMMA. A small-angle X-ray scattering analysis revealed that a tiny amount of the methacrylamide units led to a significant increase in the incompatibility between the blocks. Consequently, we obtained a lamellar microphaseseparated structure with a domain-spacing as small as 11.1 nm through the simple post-polymerization modification of low-molecular-weight PS-b-PMMA. More importantly, directed self-assembly for the modified PS-b-PMMAs was demonstrated using topographically prepatterned silicon substrates with a PS brush layer, thus highlighting the practical utility of the proposed method in next generation nanolithographic applications.