Nonequilibrium Activation of Boron-Implanted Ultra-Shallow Junctions By Femtosecond-Laser Induced Phonon Excitation Process

Nonequilibrium Activation of Boron-Implanted Ultra-Shallow Junctions By Femtosecond-Laser Induced Phonon Excitation Process
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飞秒激光诱导声子激发过程非平衡激活硼注入超浅结

DOI:
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发表时间:
2005
期刊:
4th International Conference on Silicon Epitaxy and Hetereostructures (ICSI-4), Awaji, Japan, May 23-26, (2005)
影响因子:
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通讯作者:
Y.Setsuhara
Y.Setsuhara
中科院分区:
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文献类型:
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作者:
K.Takenaka;Y.Setsuhara;K.Nishisaka;A.Ebe;S.Sugiura;K.Takahashi;K.Ono;K.Takenaka;Y.Setsuhara

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