Dicing of Gallium-Arsenide High Performance Laser Diodes for Industrial Applications: Part I: Scratching Operation
Dicing of Gallium-Arsenide High Performance Laser Diodes for Industrial Applications: Part I: Scratching Operation
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DOI：
10.1016/j.jmatprotec.2007.06.055
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发表时间：
2008-03
影响因子：
6.3
通讯作者：
K. Wasmer;C. Ballif;C. Pouvreau;D. Schulz;J. Michler
中科院分区：
文献类型：
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作者：
K. Wasmer;C. Ballif;C. Pouvreau;D. Schulz;J. Michler
基于III-V族的高功率激光二极管的机械分离通常分两步进行。首先，用锋利的金刚石尖端刮擦器械，然后进行劈裂操作。微划痕和分裂是最大限度地提高产量的关键操作，所以这方面的贡献分为两个文件根据这些基本操作。本文研究了基于砷化镓（GaAs）的三种材料条件以及三种几何形状（立方角、圆锥形和布氏）金刚石尖端的微划痕和颗粒产生的微观力学。这包括从塑性变形到原位观察微划痕到检查次表面裂纹。主要结论是，初始缺陷的深度，也被称为中值裂纹（a），是很好地描述了幂律PS ε α 3/2，其中PS是划痕载荷。此外，当刮擦载荷变得太重要时，由于压头尖端的锐角而导致表面损坏，从而导致具有不均匀深度的中间裂纹，并且由于尖端的堵塞而出现应力集中。此外，还发现初始缺陷对材料条件很敏感。从本工作中进行的划痕获得的解理操作的数据分析在第II部分中给出[Wasmer，K.，Ballif，C.，Pouvreau，C.，舒尔茨，D.，Michler，J.，出版中。工业用砷化镓高性能激光二极管的切割。第二部分.分裂手术，J。脱线。过程技术人员：doi：10.1016/j.jmatprotect.2007.06.054]。基于这项完整的研究，可以设定三个技术要求来获得原子级平坦的解理表面：（1）必须控制裂纹的萌生和扩展，即使在诸如GaAs等脆性半导体中也是如此，（2）必须优化划痕载荷范围和尖端几何形状以避免颗粒的产生和（3）最后，与模式III（剪切）相比，模式I（张力）中的裂纹张开必须最大化。
Mechanical separation of III–V based high power laser diodes is generally performed in two steps. First, the devices are scratched with a sharp diamond tip followed by a cleavage operation. Micro-scratching and cleavage are key operations for maximizing the yield production and so this contribution is divided into two papers according to these fundamental operations. In this paper, the micromechanics of micro-scratching and particle generation were examined for three material conditions based on gallium–arsenide (GaAs) as well as three geometries of diamond tips (cube corner, conical and Berkovich). This goes from the plastic deformation through in situ observations of micro-scratches to examination of subsurface cracks. The main conclusion is that the depth of the initial defect, also called median crack (a), is well described by the power-law PS∝a3/2, where PSis the scratching load. Additionally, when the scratching load became too important, the surface was damaged due to the sharp angles of the indenter tip resulting in a median crack having an uneven depth and where stress concentration appeared due to the plugging of the tip. Moreover, it was found that the initial defect is sensitive to the material conditions. The data analysis of the cleavage operation obtained from scratches performed in this work is presented in Part II [Wasmer, K., Ballif, C., Pouvreau, C., Schulz, D., Michler, J., in press. Dicing of gallium–arsenide high performance laser diodes for industrial applications. Part II. Cleavage operation, J. Mater. Process. Technol., doi:10.1016/j.jmatprotect.2007.06.054]. Based on this complete study, three technological requirements can be set for obtaining cleaved surface atomically flat: (1) crack initiation and propagation must be controlled, even in brittle semiconductors such as GaAs, (2) the scratch load range and tip geometry must be optimized to avoid particles generation and (3) finally, crack opening in Mode I (tension) must be maximized compared to Mode III (shearing).