Surface Termination of Cleaved Bi2Se3 Investigated by Low Energy Ion Scattering
Surface Termination of Cleaved Bi2Se3 Investigated by Low Energy Ion Scattering
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DOI：
10.1103/physrevlett.110.156101
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发表时间：
2013-04-08
影响因子：
8.6
通讯作者：
Yarmoff, J. A.
中科院分区：
文献类型：
--
作者：
He, X.;Zhou, W.;Yarmoff, J. A.
人们普遍认为，硒终止的拓扑绝缘体，硒化铋的表面。虽然一些硒最初是在80 K裂解后的表面，低能量离子散射揭示了一个完整的Bi终止在室温下。密度泛函理论表明，一个Bi双层顶部的批量终止结构是积极有利的。因此，提出热活化过程诱导裂解后的自发终止变化。这对此类材料和器件的电传输和长期稳定性具有深远的影响。DOI：10.1103/PhysRevLett.110.156101
It has been widely assumed that Se terminates the surface of the topological insulator, bismuth selenide. Although some Se is initially at the surface after cleaving at 80 K, low energy ion scattering reveals a complete Bi termination at room temperature. Density functional theory shows that a Bi bilayer atop the bulk-terminated structure is energetically favorable. It is thus proposed that a thermally activated process induces a spontaneous termination change after cleaving. This has profound implications on the electrical transport and long-term stability of such materials and devices. DOI: 10.1103/PhysRevLett.110.156101