Enhanced Raman sideband cooling of caesium atoms in a vapour-loaded magneto-optical trap
Enhanced Raman sideband cooling of caesium atoms in a vapour-loaded magneto-optical trap
复制标题
蒸汽负载磁光陷阱中铯原子的增强拉曼边带冷却
DOI:
10.1088/1612-2011/12/5/055501
复制
发表时间:
2015-05-01
影响因子:
1.7
通讯作者:
Jia, S.
中科院分区:
文献类型:
--
作者:
Li, Y.;Wu, J.;Jia, S.
We report enhanced three-dimensional degenerated Raman sideband cooling (3D DRSC) of caesium (Cs) atoms in a standard single-cell vapour-loaded magneto-optical trap. Our improved scheme involves using a separate repumping laser and optimized lattice detuning. We load 1.5 × 107 atoms into the Raman lattice with a detuning of −15.5 GHz (to the ground F = 3 state). Enhanced 3D DRSC is used to cool them from 60 µK to 1.7 µK within 12 ms and the number of obtained atoms is about 1.2 × 107. A theoretical model is proposed to simulate the measured number of trapped atoms. The result shows good agreement with the experimental data. The technique paves the way for loading a large number of ultracold Cs atoms into a crossed dipole trap and efficient evaporative cooling in a single-cell system.