Diamond radiation detector made of an ultrahigh-purity type IIa diamond crystal grown by high-pressure and high-temperature synthesis
Diamond radiation detector made of an ultrahigh-purity type IIa diamond crystal grown by high-pressure and high-temperature synthesis
复制标题
采用高压高温合成的超高纯IIa型金刚石晶体制成的金刚石辐射探测器
DOI：
10.1063/1.1319596
复制
发表时间：
2001
影响因子：
1.6
通讯作者：
Hideyo Ohkushi
中科院分区：
文献类型：
--
作者：
Teruya Tanaka;J. Kaneko;D. Takeuchi;H. Sumiya;M. Katagiri;T. Nishitani;H. Takeuchi;T. Iida;Hideyo Ohkushi
研制了由超高纯度IIa型金刚石晶体制成的人造金刚石辐射探测器。通过高压和高温合成生长的金刚石晶体含有少于0.1ppm的氮杂质，即，1/10的传统IIa型金刚石晶体。由于超高纯度IIa型金刚石晶体由于硼的微量杂质而为p型半导体，所以检测器采用由肖特基和欧姆接触组成的结构以抑制漏电流的增加。为了同样的目的，一个金属-绝缘体-半导体结构，采用化学气相沉积金刚石绝缘层的探测器之一。在探测器获得的5.486 MeV α能谱中观察到多个峰;在这些测量中，空穴的运动产生了探测器输出脉冲的主要部分。与通过常规IIa型金刚石辐射检测器获得的峰相比，每个光谱中的一个峰几乎不受光照射的影响，甚至不受370 nm（3.4eV）的紫外光的影响。这一实验结果表明，在晶体中有一个上级部分，那里的深能级不存在那么多。虽然没有直接证据，但可以预期晶体中硼杂质分布的影响。另一方面，电子俘获严重发生，导致电荷收集损失;未确认氮杂质的减少对电子行为的影响。
Synthetic diamondradiation detectors made of ultrahigh-purity type IIa diamond crystals were developed. The diamond crystals, which were grown by high-pressure and high-temperature synthesis, contained less nitrogen impurity than 0.1 ppm, i.e., 1/10 of conventional type IIa diamond crystals. Since the ultrahigh-purity type IIa diamond crystal was a p-type semiconductor due to a trace impurity of boron, a structure consisting of Schottky and ohmic contacts was adopted for the detectors to suppress an increase in leakage current. For the same purpose, a metal–insulator–semiconductor structure using a chemical vapor deposition diamond insulating layer was adopted for one of the detectors. Plural peaks were observed in the 5.486 MeV α energy spectra obtained by the detectors; motion of holes produced the main part of output pulses from the detectors on these measurements. One of the peaks in each spectrum was hardly influenced by light irradiation, even ultraviolet light of 370 nm (3.4 eV), compared with a peak obtained by the conventional type IIa diamondradiation detector. This experimental result indicated that there was a superior part in the crystal where deep energy levels did not exist so much. Although there was no direct evidence, influence of a distribution of the boron impurity in the crystal was expected. On the other hand, electron trapping severely occurred and resulted in loss in charge collection; an effect of the reduction in the nitrogen impurity was not confirmed on the behavior of electrons.
14 MeV中子层状CVD单晶金刚石辐射探测器响应函数测量。
DOI：
--
发表时间：
2004
期刊：
Review of Scientific Instruments 75
影响因子：
--
作者：
J.H.Kaneko et al.
通讯作者：
J.H.Kaneko et al.