Multiple-Throw Millimeter-Wave FET Switches for Frequencies from 60 up to 120 GHz
Multiple-Throw Millimeter-Wave FET Switches for Frequencies from 60 up to 120 GHz
复制标题
适用于 60 至 120 GHz 频率的多掷毫米波 FET 开关
DOI：
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发表时间：
2008
期刊：
影响因子：
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通讯作者：
A. Leuther
中科院分区：
文献类型：
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作者：
I. Kallfass;S. Diebold;H. Massler;S. Koch;Matthias Seelmann;A. Leuther
本文介绍了各种毫米波FET开关的设计和性能实现的变形HEMT技术。单刀多掷开关配置针对60、94和120 GHz的无线通信前端和成像辐射计。在SPDT开关中，最先进的插入损耗分别为1.4和1.8 dB，分别在60和94 GHz下实现。与PIN二极管开关相比，插入损耗<2 dB，频率高达120 GHz。短路短截线用于补偿寄生FET电容并允许匹配。线性数据为60和94 GHz的单刀双掷开关。与最先进的平面SPDT开关的全面比较。用于多天线收发器的2：6开关网络在60 GHz时实现<4 dB的插入损耗。
This paper presents the design and performance of various millimeter-wave FET switches realized in a metamorphic HEMT technology. The single-pole multi-throw switch configurations are targeting wireless communication frontends and imaging radiometers at 60, 94 and 120 GHz. In SPDT switches, state-of-the-art insertion loss of 1.4 and 1.8 dB is achieved at 60 and 94 GHz, respectively. Rivalled only by PIN diode switches, an insertion loss of <2 dB is demonstrated up to 120 GHz. Shorted stubs are used to compensate for parasitic FET capacitance and allow for matching. Linearity data is presented for 60 and 94 GHz SPDT switches. A comprehensive comparison with state-of-the-art planar SPDT switches is included. A 2:6 switch network for multi-antenna transceivers achieves <4 dB insertion loss at 60 GHz.