Low‐temperature growth of high quality AlN films on carbon face 6H‐SiC
Low‐temperature growth of high quality AlN films on carbon face 6H‐SiC
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6H-SiC碳表面低温生长高质量AlN薄膜
DOI：
10.1002/pssr.200701246
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发表时间：
2008
期刊：
影响因子：
--
通讯作者：
M. Oshima
中科院分区：
文献类型：
--
作者：
Myungsung Kim;J. Ohta;A. Kobayashi;H. Fujioka;M. Oshima
采用脉冲激光沉积法在原子级平坦碳面6 H-SiC（000$ \bar 1 $）衬底上生长了AlN薄膜，并研究了其结构特性。原位反射高能电子衍射观察表明，AlN在710 °C下以Stranski-Krastanov模式生长，而典型的逐层生长发生在室温（RT）下，具有原子级平坦表面。结果表明，AlN薄膜的结晶质量通过将生长温度降低至RT而显著改善，RT生长的AlN薄膜的0004和10$ \bar 1 $2衍射的X射线摇摆曲线的半高全宽值分别为0.05°和0.07°。X射线倒易空间映射显示，在RT生长的情况下，失配位错的引入被抑制，这可能是晶体质量改善的原因。（© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA，魏因海姆）
AlN films have been grown on atomically flat carbon face 6H‐SiC (000$ \bar 1 $) substrates by pulsed laser deposition and their structural properties have been investigated. In‐situ reflection high‐energy electron diffraction observations have revealed that growth of AlN at 710 °C proceeds in a Stranski–Krastanov mode, while typical layer‐by‐layer growth occurs at room temperature (RT) with atomically flat surfaces. It has been revealed that the crystalline quality of the AlN film is dramatically improved by the reduction in growth temperature down to RT and the full width at half maximum values in the X‐ray rocking curves for 0004 and 10$ \bar 1 $2 diffractions of the RT‐grown AlN film are 0.05° and 0.07°, respectively. X‐ray reciprocal space mapping has revealed that the introduction of misfit dislocations is suppressed in the case of RT growth, which is probably responsible for the improvement in crystalline quality. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
晶格匹配 Zn0 衬底上 m 面 GaN 的室温外延生长
DOI：
--
发表时间：
2007
期刊：
Applied Physics Letters 90
影响因子：
--
作者：
岡部朋永;西川雅章;武田展雄;小林篤;小林篤;上野耕平;小林篤
通讯作者：
小林篤