New Deformation-Induced Nanostructure in Silicon
New Deformation-Induced Nanostructure in Silicon
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DOI：
10.1021/acs.nanolett.8b01910
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发表时间：
2018-07-01
期刊：
影响因子：
10.8
通讯作者：
Guo, Dongming
中科院分区：
文献类型：
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作者：
Wang, Bo;Zhang, Zhenyu;Guo, Dongming
在过去的50年里，人们一直在研究由相变引起的硅纳米结构。纳米结构的性能相比于本体对应物有所改善。然而，限制和加载条件不足以加工和制造高性能器件。因此，在m/s的加载速度下通过纳米级变形制造的纳米结构尚未得到证实。在本研究中，通过特别设计的金刚石刀头在定制的装置上以40.2 m/s的速度进行磨削或刮擦（金刚石刀头下的计算应力为5.11 GPa）。这导致了一种新的方法，用于制造纳米结构的纳米级变形的加载速度为m/s。通过透射电子显微镜（TEM）观察到一个新的变形诱导纳米结构，由非晶相，一个新的tetraxite相，滑移带，孪生超晶格，和一个单晶。在2.16 GPa的剪切应力下，通过从头算模拟，阐明了新相的形成机理。这种方法为以m/s的速度通过纳米级变形制造纳米结构开辟了一条新的路线。我们的发现为晶体管、集成电路、二极管、太阳能电池和储能系统的潜在应用提供了新的见解。
Nanostructures in silicon (Si) induced by phase transformations have been investigated during the past 50 years. Performances of nanostructures are improved compared to that of bulk counterparts. Nevertheless, the confinement and loading conditions are insufficient to machine and fabricate high-performance devices. As a consequence, nanostructures fabricated by nanoscale deformation at loading speeds of m/s have not been demonstrated yet. In this study, grinding or scratching at a speed of 40.2 m/s was performed on a custom-made setup by an especially designed diamond tip (calculated stress under the diamond tip in the order of 5.11 GPa). This leads to a novel approach for the fabrication of nanostructures by nanoscale deformation at loading speeds of m/s. A new deformation-induced nanostructure was observed by transmission electron microscopy (TEM), consisting of an amorphous phase, a new tetragonal phase, slip bands, twinning superlattices, and a single crystal. The formation mechanism of the new phase was elucidated by ab initio simulations at shear stress of about 2.16 GPa. This approach opens a new route for the fabrication of nanostructures by nanoscale deformation at speeds of m/s. Our findings provide new insights for potential applications in transistors, integrated circuits, diodes, solar cells, and energy storage systems.