Deep-level emissions influenced by O and Zn implantations in ZnO
Deep-level emissions influenced by O and Zn implantations in ZnO
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DOI：
10.1063/1.2135880
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发表时间：
2005-11-21
影响因子：
4
通讯作者：
Yang, JH
中科院分区：
文献类型：
--
作者：
Zhao, QX;Klason, P;Yang, JH
通过光致发光研究了一组以不同密度注入 O 和 Zn 的块状 ZnO 样品。 O和Zn的注入浓度在1x10(17)/cm(3)和5x10(19)/cm(3)之间变化。植入后样品在氧气环境中进行热处理。结果清楚地表明了 O 和 Zn 注入对深能级发射的影响。通过比较不同注入样品的光致发光光谱，我们可以得出结论，V-Zn 是观察到的深能级发射的原因。此外，在注入浓度为5x10(19)/cm(3)的O注入样品中，在77 K时出现了发射能量为3.08 eV的新跃迁。新的发射物初步鉴定为O-反位O-Zn。 (c) 2005 年美国物理研究所。
A set of bulk ZnO samples implanted with O and Zn at various densities were investigated by photoluminescence. The implantation concentration of O and Zn is varied between 1x10(17)/cm(3) and 5x10(19)/cm(3). The samples were thermally treated in an oxygen gas environment after the implantation. The results clearly show the influence of O and Zn implantations on the deep-level emission. By comparing the photoluminescence spectra for the samples with different implantations, we can conclude that the V-Zn is responsible to the observed deep-level emission. In addition, a novel transition at the emission energy of 3.08 eV at 77 K appears in the O-implanted sample with 5x10(19)/cm(3) implantation concentration. The novel emission is tentatively identified as O-antisite O-Zn. (c) 2005 American Institute of Physics.