Fabrication of Novel Structures on Silicon with Femtosecond Laser Pulses
Fabrication of Novel Structures on Silicon with Femtosecond Laser Pulses
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DOI：
10.2961/jlmn.2010.03.0009
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发表时间：
2010-12
影响因子：
1.1
通讯作者：
Chung-Wei Cheng;Y. Kozawa;S. Sato
中科院分区：
文献类型：
--
作者：
Chung-Wei Cheng;Y. Kozawa;S. Sato
在本研究中，利用径向和方位偏振飞秒激光，脉冲持续时间约为120 fs，波长为800 nm，重复频率为1 kHz，在硅表面诱导制备了新型微纳结构。结果表明，当激光通量接近硅的烧蚀阈值时，在低激光通量区（0.7~0.8 J/cm）形成周期约为600~700 nm的纳米结构，其取向与激光偏振方向垂直；而随着激光通量的增加（0.9~1.1 J/cm），形成周期约为2~3 μm的微结构，其取向与激光偏振方向平行。
In this study, the fabrication of novel micro/nano structures were induced on silicon surfaces using radially and azimuthally polarized femtosecond laser, with a ~120 fs pulse duration, an 800 nm wavelength, and a 1 kHz repetition rate. Results showed that, as the laser fluence approached the ablation threshold of the silicon, nanostructures with a period of approximately 600~700 nm were formed at the low laser fluence region (0.7~0.8 J/cm), and their orientations were perpendicular to the laser polarization. However, as the laser fluence increased (0.9~1.1 J/cm), microstructures with a period of approximately 2~3 μm were formed, and their orientation were parallel to the laser polarization.